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1/12 november 2002 stp6nk90z - stp6nk90zfp stb6nk90z n-channel 900v - 1.75 w - 5.8a to-220/to-220fp/d 2 pak zener-protected supermesh?power mosfet n typical r ds (on) = 1.75 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n very low intrinsic capacitances n very good manufacturing repeatibility description the supermesh? series is obtained through an extreme optimization of sts well established strip- based powermesh? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st full range of high voltage mosfets in- cluding revolutionary mdmesh? products. applications n high current, high speed switching n ideal for off-line power supplies, adaptors and pfc n lighting ordering information type v dss r ds(on) i d pw stp6nk90z stp6nk90zfp stb6nk90z 900 v 900 v 900 v <2 w <2 w <2 w 5.8 a 5.8 a 5.8 a 140 w 30 w 140 w sales type marking package packaging stp6nk90z p6nk90z to-220 tube stp6nk90zfp p6nk90zfp to-220fp tube stb6nk90zt4 b6nk90z d 2 pa k tape & reel to-220 to-220fp 1 2 3 1 3 d 2 pak internal schematic diagram
stp6nk90z - stp6nk90zfp - stb6nk90z 2/12 absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 5.8a, di/dt 200a/s, v dd v (br)dss ,t j t jmax. (*) limited only by maximum temperature allowed thermal data avalanche characteristics gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the devices esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit stp6nk90z / stb6nk90z stp6nk90zfp v ds drain-source voltage (v gs =0) 900 v v dgr drain-gate voltage (r gs =20k w ) 900 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 5.8 5.8 (*) a i d drain current (continuous) at t c = 100c 3.65 3.65 (*) a i dm ( ) drain current (pulsed) 23.2 23.2 (*) a p tot total dissipation at t c = 25c 140 30 w derating factor 1.12 0.24 w/c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k w) 4000 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns viso insulation withstand voltage (dc) -- 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c to-220 d 2 pa k to-220fp unit rthj-case thermal resistance junction-case max 0.89 4.2 c/w rthj-pcb thermal resistance junction-pcb max (when mounted on minimum footprint) 60 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5.8 a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar ,v dd =50v) 300 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
3/12 stp6nk90z - stp6nk90zfp - stb6nk90z electrical characteristics (t case =25c unless otherwise specified) on/off dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 900 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds =0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds =v gs ,i d = 100a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs =10v,i d = 2.9 a 1.75 2 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d =2.9a 5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v,f=1mhz,v gs = 0 1350 130 26 pf pf pf c oss eq. (3) equivalent output capacitance v gs =0v,v ds = 0v to 720v 70 pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =450v,i d =3a r g = 4.7 w ,v gs =10v (resistive load see, figure 3) 17 20 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =720v,i d = 5.8 a, v gs =10v 46.5 8.5 25 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 450 v, i d =3a r g =4.7 w ,v gs =10v (resistive load see, figure 3) 45 20 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 720v, i d = 5.8 a, r g =4.7 w , v gs =10v (inductive load see, figure 5) 11 12 20 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 5.8 23.2 a a v sd (1) forward on voltage i sd = 5.8 a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5.8 a, di/dt = 100a/s v dd =36v,t j = 150c (see test circuit, figure 5) 840 5880 14 ns nc a
stp6nk90z - stp6nk90zfp - stb6nk90z 4/12 thermal impedance for to-220/d2pak safe operating area for to-220fp safe operating area for to-220/d2pak transfer characteristics output characteristics thermal impedance for to-220fp
5/12 stp6nk90z - stp6nk90zfp - stb6nk90z normalized on resistance vs temperature normalized gate threshold voltage vs temp. capacitance variations gate charge vs gate-source voltage static drain-source on resistance transconductance
stp6nk90z - stp6nk90zfp - stb6nk90z 6/12 maximum avalanche energy vs temperature source-drain diode forward characteristics normalized bvdss vs temperature
7/12 stp6nk90z - stp6nk90zfp - stb6nk90z fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
stp6nk90z - stp6nk90zfp - stb6nk90z 8/12 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
9/12 stp6nk90z - stp6nk90zfp - stb6nk90z l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.5 0.045 0.067 f2 1.15 1.5 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
stp6nk90z - stp6nk90zfp - stb6nk90z 10/12 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
11/12 stp6nk90z - stp6nk90zfp - stb6nk90z tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stp6nk90z - stp6nk90zfp - stb6nk90z 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com

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